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Development of a Deep Silicon Phase Fresnel Lens using Gray-scale Lithography and Deep Reactive Ion Etching

机译：使用灰度光刻和深反应离子刻蚀技术开发深硅相菲涅尔透镜

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A phase Fresnel lens (PFL) could achieve higher sensitivity and angular resolution in astronomical observations than the current generation of gamma and hard x-ray instruments. For ground tests of a PFL system, silicon lenses must be fabricated on the micro-scale with controlled profiles to enable high lens efficiency. Thus, two MEMS-based technologies, gray-scale lithography and deep reactive ion etching (DRIE), are extended to create multiple controlled step heights in silicon on the necessary scale. A Gaussian approximation is introduced as a method of predicting a photoresist gray level height given the amount of transmitted light through a gray-scale optical mask. Etch selectivity during DRIE is then accurately controlled by introducing an oxygen-only step to a standard Bosch cycle to produce the desired scaling factor between the photoresist and silicon profiles. Finally, a profile evaluation method is developed to calculate the expected efficiency of measured silicon profiles. Calculated efficiencies above 87% have been achieved.

机译：相较于当前一代的伽马和硬X射线仪器，菲涅尔相位透镜（PFL）在天文观测中可实现更高的灵敏度和角分辨率。对于PFL系统的地面测试，必须在微尺度上制造具有受控轮廓的硅透镜，以实现高透镜效率。因此，扩展了两种基于MEMS的技术，即灰度光刻和深反应离子刻蚀（DRIE），以在必要的规模上在硅中创建多个受控的台阶高度。引入高斯近似作为在给定通过灰度光学掩模的透射光量的情况下预测光刻胶灰度高度的方法。然后，通过在标准Bosch循环中引入纯氧步骤，以在光刻胶和硅轮廓之间产生所需的缩放比例，从而精确控制DRIE中的蚀刻选择性。最后，开发了一种轮廓评估方法来计算所测硅轮廓的预期效率。计算效率已达到87％以上。

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Morgan, Brian;
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年度 2004
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专利

1. Microfabrication of 3D silicon MEMS structures using gray-scale lithography and deep reactive ion etching [J] . Waits CM, Morgan B, Kastantin M, Sensors and Actuators, A. Physical . 2005,第1期

机译：使用灰度光刻和深度反应离子刻蚀对3D硅MEMS结构进行微加工
2. Laser desorption ionization (LDI) silicon nanopost array chips fabricated using deep UV projection lithography and deep reactive ion etching [J] . Morris Nicholas J., Anderson Heather, Thibeault Brian, RSC Advances . 2015,第88期

机译：使用深UV投影光刻和深反应离子蚀刻制造的激光解吸电离（LDI）硅纳米多型阵列芯片
3. Periodic arrays of deEP 1nanopores made in silicon with reactive ion etching and deEP 1UV lithography [J] . Woldering LA, Tjerkstra RW, Jansen HV, Nanotechnology . 2008,第14期

机译：用反应离子刻蚀和deEP 1UV光刻技术在硅中制成的deEP 1纳米孔的周期性阵列
4. Shallow Fresnel lens fabrication using grey scale lithography made by high energy beam sensitive mask (HEBS) technology and reactive ion etching [C] . Tali Nachmias, Avi Ohayon, Shefer E. Melzer, Conference on advanced fabrication technologies for microano optics and photonics II; 20090126-28; San Jose, CA(US) . 2009

机译：使用高能束敏感掩模（HEBS）技术和反应性离子蚀刻制成的使用灰度光刻的浅菲涅尔透镜制造
5. Development of a deep silicon phase Fresnel lens using gray-scale lithography and deep reactive ion etching [D] . Morgan, Brian C. 2004

机译：使用灰度光刻和深反应离子刻蚀开发深硅相菲涅耳透镜
6. Formation of silicon nanostructures with a combination of spacer technology and deep reactive ion etching [O] . Daniel CS Bien, Hing Wah Lee, Siti Aishah Mohamad Badaruddin 2012

机译：结合隔离技术和深反应离子刻蚀形成硅纳米结构
7. Large-scale Patterning of Hydrophobic Silicon Nanostructure Arrays Fabricated by Dual Lithography and Deep Reactive Ion Etching [O] . Zhibo Ma, Chengyu Jiang, Weizheng Yuan, 2014

机译：双光刻和深反应离子刻蚀制备的疏水性硅纳米结构阵列的大规模图案化

Development of a Deep Silicon Phase Fresnel Lens using Gray-scale Lithography and Deep Reactive Ion Etching

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